Nobukazu Ohnishi: search on Z-Library

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1

An Attempt of In Situ Observation of Crystallization Phenomena under the Micro Gravity.

SHIMIZU, KENJI, TSUKAMOTO, KATSUO, MARUYAMA, SHIGENAO, KOHNO, YASUSHI, OHNISHI, NOBUKAZU

Journal:

KAGAKU KOGAKU RONBUNSHU

Year:

1998

File:

PDF, 2.53 MB

1998

2

Evidence from photoluminescene spectra for the formation of extremely low-compensated P- and N-type Ge-doped GaAs grown by molecular beam epitaxy

Yunosuke Makita, Masahiko Mori, Hideki Tanaka, Hideo Yokohama, Katsuhiro Irie, Nobukazu Ohnishi, Shigeru Shigetomi

Journal:

Journal of Luminescence

Year:

1988

Language:

english

File:

PDF, 1.83 MB

english, 1988

3

Effect of substrate orientation on the defect-induced bound exciton emissions in GaAs grown by molecular beam epitaxy

Nobukazu Ohnishi, Yunosuke Makita, Akimasa Yamada, Hisao Asakura, Tokue Matsumori

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 304 KB

english, 1991

4

Optical and electrical properties of C+-implanted GaAs

Shigeru Shigetomi, Yunosuke Makita, Masahiko Mori, Yutaka Koga, Paul Phelan, Nobukazu Ohnishi, Hajime Shibata, Tokue Matsumori

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1989

Language:

english

File:

PDF, 383 KB

english, 1989

5

The short chain sugar acid, 2-buten-4-olide, activates oxytocin-secreting neurons but not arginine vasopressin-secreting neurons in the hypothalamus of rats

Makoto Kawasaki, Chiyo Yamaga, Tatsushi Onaka, Jun Saito, Takashi Mera, Hirofumi Hashimoto, Hiroaki Fujihara, Nobukazu Okimoto, Hideo Ohnishi, Toshitaka Nakamura, Yoichi Ueta

Journal:

Year:

2006

Language:

english

File:

PDF, 662 KB

english, 2006

6

Photoluminescence of strongly compensated GaAs dually implanted by Se+ (donor) and Zn+ (acceptor) ions

Nobukazu Ohnishi, Yunosuke Makita, Kazuhiro Kudo, Toshio Nomura, Hideki Tanaka, Katsuhiro Irie, Tomio Izumi, Toshihiko Kobayashi, Hisao Tanoue, Toshihiko Kanayama, Tokue Matsumori, Yoshinobu Mitsuhash

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1987

Language:

english

File:

PDF, 359 KB

english, 1987

7

Local structure of heavily Zn+-implanted GaAs studied by photoluminescence and fluorescence EXAFS

Kazuhiro Kudo, Yunosuke Makita, Hiroyuki Oyanagi, Nobukazu Ohnishi, Toshio Nomura, Katsuhiro Irie, Fumiya Uehara, Yoshinobu Mitsuhashi

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1987

Language:

english

File:

PDF, 360 KB

english, 1987

8

Induction of galanin-like peptide gene expression in the arcuate nucleus of the rat after acute but not chronic inflammatory stress

Jun Saito, Yumi Ozaki, Makoto Kawasaki, Hideo Ohnishi, Nobukazu Okimoto, Toshitaka Nakamura, Yoichi Ueta

Journal:

Molecular Brain Research

Year:

2005

Language:

english

File:

PDF, 502 KB

english, 2005

9

Galanin-like peptide gene expression in the hypothalamus and posterior pituitary of the obese fa/fa rat

Jun Saito, Yumi Ozaki, Makoto Kawasaki, Hideo Ohnishi, Nobukazu Okimoto, Toshitaka Nakamura, Yoichi Ueta

Journal:

Year:

2004

Language:

english

File:

PDF, 340 KB

english, 2004

10

Fish test for endocrine-disruption and estimation of water quality of Japanese rivers

Shosaku Kashiwada, Hidenori Ishikawa, Nobukazu Miyamoto, Yuta Ohnishi, Yasumoto Magara

Journal:

Year:

2002

Language:

english

File:

PDF, 128 KB

english, 2002

11

Observation of new common emissions in GaAs produced by ion implantation of four acceptor impurities

Takeuchi, Yoshinori, Makita, Yunosuke, Kudo, Kazuhiro, Nomura, Toshio, Tanaka, Hideki, Irie, Katsuhiro, Ohnishi, Nobukazu

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 569 KB

english, 1986

12

Photoluminescence of Mg-doped GaAs grown by molecular beam epitaxy using Mg3As2 as a Mg source: A comparison with Mg+ ion implantation

Makita, Yunosuke, Takeuchi, Yoshinori, Ohnishi, Nobukazu, Nomura, Toshio, Kudo, Kazuhiro, Tanaka, Hideki, Lee, Hae-Chol, Mori, Masahiko, Mitsuhashi, Yoshinobu

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 556 KB

english, 1986

13

Conditions for the formation of defect-induced bound exciton emissions in GaAs grown by molecular beam epitaxy

Ohnishi, Nobukazu, Makita, Yunosuke, Asakura, Hisao, Iida, Tsutomu, Yamada, Akimasa, Shibata, Hajime, Uekusa, Shin-ichiro, Matsumori, Tokue

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 658 KB

english, 1993

14

Influence of the implantation of C+ ions on photoluminescence and electrical properties of GaAs

Shigetomi, Shigeru, Makita, Yunosuke, Beye, Aboubaker C., Yamada, Akimasa, Ohnishi, Nobukazu, Matsumori, Tokue

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 762 KB

english, 1991

15

Liquid-phase epitaxy of heavily Mg-doped GaAs: Formation of a new near-band-edge emission exclusively pertinent to acceptor impurities

Mori, Masahiko, Makita, Yunosuke, Okada, Yoshio, Ohnishi, Nobukazu, Mitsuhashi, Yoshinobu, Tanaka, Hideki, Matsumori, Tokue

Journal:

Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 499 KB

english, 1987

16

A theoretical explanation for the red energy shift of a newly discovered, exclusively acceptor-associated emission in GaAs

Ohnishi, Nobukazu, Makita, Yunosuke, Mori, Masahiko, Irie, Katsuhiro, Takeuchi, Yoshinori, Shigetomi, Shigeru

Journal:

Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 540 KB

english, 1987

17

Concentration ratio dependence of selective optical compensation effect in dually Zn+ and Se+ ion-implanted GaAs

Nomura, Toshio, Makita, Yunosuke, Irie, Katsuhiro, Ohnishi, Nobukazu, Kudo, Kazuhiro, Tanaka, Hideki, Mitsuhashi, Yoshinobu

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 448 KB

english, 1986

18

Selective self-optical compensation effect for a newly discovered acceptor-associated emission in Zn+ ion-implanted GaAs

Ohnishi, Nobukazu, Makita, Yunosuke, Irie, Katsuhiro, Kudo, Kazuhiro, Nomura, Toshio, Tanaka, Hideki, Mori, Masahiko, Mitsuhashi, Yoshinobu

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 527 KB

english, 1986

19

Formation of a new deep emission in Si+, S+, Se+, and Te+ ion-implanted GaAs

Makita, Yunosuke, Takeuchi, Yoshinori, Nomura, Toshio, Tanaka, Hideki, Kanayama, Toshihiko, Tanoue, Hisao, Irie, Katsuhiro, Ohnishi, Nobukazu

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 429 KB

english, 1986

20

As4 to Ga flux ratio dependence of the optical and electrical properties of Ge-doped GaAs grown by molecular-beam epitaxy

Makita, Yunosuke, Tanaka, Hideki, Mori, Masahiko, Ohnishi, Nobukazu, Phelan, Paul, Shigetomi, Shigeru, Shibata, Hajime, Matsumori, Tokue

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 630 KB

english, 1989

21

Theory of double refraction and kerr effect in BaTiO3

Kinase, Wataru, Ohnishi, Nobukazu, Yoshikawa, Masanori, Mori, Kazushige

Journal:

Year:

1984

Language:

english

File:

PDF, 540 KB

english, 1984

22

Quantum theory of electrooptic effect in BaTiO3

Kinase, Wataru, Yoshikawa, Masanori, Ohnishi, Nobukazu

Journal:

Year:

1986

Language:

english

File:

PDF, 491 KB

english, 1986

23

Photoluminescence Spectra of C+-Implanted GaAs: Experimental Verification on Amphoteric Features of Carbon Impurities in GaAs

Makita, Yunosuke, Shigetomi, Shigeru, Mori, Masahiko, Ohnishi, Nobukazu, Phelan, Paul, Matsumori, Tokue

Journal:

MRS Proceedings

Year:

1988

Language:

english

File:

PDF, 433 KB

english, 1988

24

Formation of a New Blue-Shift Emission in Highly Be-Doped GaAs Grown by Molecular Beam Epitaxy

Makita, Yunosuke, Mori, Masahiko, Ohnishi, Nobukazu, Phelan, Paul, Taguchi, Takashi, Sugiyama, Yoshinobu, Tacano, Munecazu

Journal:

MRS Proceedings

Year:

1987

Language:

english

File:

PDF, 264 KB

english, 1987

25

Optical Properties of Se+- and Zn+-Implanted GaAs: Photoluninescence Behavior at the Band-Edge

Makita, Yunosuke, Mori, Masahiko, Lee, Hae-Chol, Kanayama, Toshihiko, Ohnishi, Nobukazu, Tanaka, Hideki, Phelan, Paul, Matsumori, Tokue

Journal:

MRS Proceedings

Year:

1988

Language:

english

File:

PDF, 408 KB

english, 1988

26

Mg+ Ion Implantation into GaAs : Annealing and Photoluminescence Properties

Takeuci, Yoshinori, Makita, Yunosuke, Mori, Masahiko, Ohnishi, Nobukazu, Shibata, Hajime, Matsumori, Tokue

Journal:

MRS Proceedings

Year:

1988

Language:

english

File:

PDF, 453 KB

english, 1988

27

Formation of Radiative Binding States for the Pairs Between Acceptors in Heavily Acceptor-Doped Gaas.

Ohnishi, Nobukazu, Makita, Nunosuke, Shibata, Hajime, Beye, Aboubaker.C., Yamada, Akimasa, Mori, Masahiko

Journal:

MRS Proceedings

Year:

1989

Language:

english

File:

PDF, 429 KB

english, 1989

28

Dipole interactions in antiferroelectric PbZrO3

Kinase, Wataru, Yano, Kazuo, Ohnishi, Nobukazu

Journal:

Year:

1983

Language:

english

File:

PDF, 601 KB

english, 1983

29

SPIE Proceedings [SPIE Semiconductor Conferences - Bay Point, FL (Monday 23 March 1987)] Growth of Compound Semiconductors - Experimental and theoretical investigations on the formation of acceptor-acceptor pair emission in GaAs

Makita, Yunosuke, Mori, Masahiko, Ohnishi, Nobukazu, Irie, Katsuhiro, Shigetomi, Shigeru, Tanaka, Hideki, Gunshor, Robert L., Morkoc, Hadis

Year:

1987

Language:

english

File:

PDF, 326 KB

english, 1987

30

SPIE Proceedings [SPIE 1988 Semiconductor Symposium - Newport Beach, CA (Monday 14 March 1988)] Spectroscopic Characterization Techniques for Semiconductor Technology III - The Recombination Mechanism Of Excited-State Acceptor-Acceptor Pairs In GaAs

Ohnishi, Nobukazu, Makita, Yunosuke, Mori, Masahiko, Phelan, Paul, Irie, Katsuhiro, Glembocki, Orest J., Pollak, Fred H., Ponce, Fernando A.

Year:

1988

Language:

english

File:

PDF, 478 KB

english, 1988

31

Long-term tolerability, safety and efficacy of adjunctive perampanel in the open-label, dose-ascending Study 231 and extension Study 233 in Japanese patients with epilepsy

Usui, Naotaka, Akamatsu, Naoki, Nakasato, Nobukazu, Ohnishi, Akihiro, Kaneko, Sunao, Hiramatsu, Hidetaka, Saeki, Kazunori, Miyagishi, Hideaki, Inoue, Yushi

Journal:

Year:

2018

Language:

english

File:

PDF, 517 KB

english, 2018

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